TEMPERATURE DEPENDENCE OF THE THRESHOLD CURRENT OF GaAs LASERS


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Authors

  • Nailə Adəm Qardaşbəyova
  • Adilə Quliyeva
  • S.Həsənova Abdullayeva

DOI:

https://doi.org/10.5281/zenodo.15714294

Abstract

At small values ​​of the direct current, spontaneous emission is observed in p-n junctions in all directions. The intensity of light and the width of the spectral curve of the emission depend on the value of the current. As the current increases, the amplification factor of the emission increases. When the current increases to a certain value, the laser effect occurs, that is, the emission becomes coherent. This minimum value of the current corresponding to the onset of coherent generation at the junction is called the threshold current. The article shows that the threshold current density in alloy-doped lasers is approximately three times smaller than the threshold current density of lasers obtained by diffusion at room temperature.

References

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Галицкий В.М., Елесин В.Ф. Резонансное взаимодействие электромагнитных полей с полупроводниками. М.Энергоатомиздат 1986.192с.

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H.B.Abdullayev, Z.Ə.İsgəndərzadə Yarımkeçirici çeviricilər Bakı-1974

Published

2025-06-20

How to Cite

Qardaşbəyova, N. A., Quliyeva, A., & Abdullayeva, S. (2025). TEMPERATURE DEPENDENCE OF THE THRESHOLD CURRENT OF GaAs LASERS. ARCENG (INTERNATIONAL JOURNAL OF ARCHITECTURE AND ENGINEERING) ISSN: 2822-6895, 5(1), 200–204. https://doi.org/10.5281/zenodo.15714294

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